2SB609
2SB609 is PNP Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min.)
- Low Collector Saturation Voltage-
: VCE(sat)= -1.0(Max.) @IC= -2A
- Wide area of safe operation
- With TO-66 package
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for audio frequency power amplifiers applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-100
VCEO
Collector-Emitter Voltage
-80
VEBO
Emitter-Base Voltage
-5
Collector Current-Continuous
-4
Collector Current-Peak
-6
Collector Power Dissipation@TC=25℃
Junction...
