Datasheet Details
| Part number | 2SB616 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 185.77 KB |
| Description | PNP Transistor |
| Datasheet | 2SB616-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB616.
| Part number | 2SB616 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 185.77 KB |
| Description | PNP Transistor |
| Datasheet | 2SB616-INCHANGE.pdf |
|
|
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·Collector-Emitter BreakdownVoltage- : V(BR)CEO= -100V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= -1.0(Max.) @IC= -2A ·With TO-3PN package ·Complement to Type 2SD586 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifiers applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A PC Collector Power Dissipation@TC=25℃ 60 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB616 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB616 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
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