2SB616
2SB616 is PNP Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min.)
- Low Collector Saturation Voltage-
: VCE(sat)= -1.0(Max.) @IC= -2A
- With TO-3PN package
- plement to Type 2SD586
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for power amplifiers applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-100
VCEO
Collector-Emitter Voltage
-100
VEBO
Emitter-Base Voltage
-5
Collector Current-Continuous
-5
Collector Power Dissipation@TC=25℃
Junction Temperature
℃
Tstg
Storage Temperature
-55~150 ℃ isc website：.iscsemi....
