Datasheet Details
| Part number | 2SB628 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 215.39 KB |
| Description | PNP Transistor |
| Datasheet | 2SB628-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor 2SB628.
| Part number | 2SB628 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 215.39 KB |
| Description | PNP Transistor |
| Datasheet | 2SB628-INCHANGE.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min) ·Complement to Type 2SD608 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and low speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.5 A ICM Collector Current-Peak -3.0 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.3 A 1.5 W 20 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -1A;
IB= -0.1A VBE(sat) Base-Emitter Saturation Voltage IC= -1A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB628 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SB624 | PNP Transistor |
| 2SB625 | PNP Transistor |
| 2SB626 | PNP Transistor |
| 2SB600 | PNP Transistor |
| 2SB601 | PNP Transistor |
| 2SB604 | PNP Transistor |
| 2SB608 | PNP Transistor |
| 2SB609 | PNP Transistor |
| 2SB611 | Silicon PNP Power Transistor |
| 2SB612 | PNP Transistor |