2SB668
2SB668 is PNP Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min)
- High DC Current Gain
: h FE= 2000(Min) @IC= -0.5A
- Low Saturation Voltage
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for use in power amplifier and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
VCEO
Collector-Emitter Voltage
-100
VEBO
Emitter-Base Voltage
-5
Collector Current-Continuous
-3
Collector Current-Peak
Collector Power Dissipation
@ Ta=25℃
Collector Power Dissipation
@ TC=25℃
Junction...
