Datasheet Details
| Part number | 2SB668 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 181.09 KB |
| Description | PNP Transistor |
| Datasheet |
 2SB668 Datasheet
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| Part number | 2SB668 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 181.09 KB |
| Description | PNP Transistor |
| Datasheet |
2SB668 Datasheet
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain : hFE= 2000(Min) @IC= -0.5A ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3 A ICP Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -5 A 2 W 25 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor 2SB668 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ;
IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -2mA;
IC= 0 V(BR)CBO Collector-Base breakdown voltage IC=-1mA;
isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor 2SB668.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB668 | SILICON POWER TRANSISTOR | SavantIC |
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