Datasheet4U Logo Datasheet4U.com

2SB675 - PNP Transistor

General Description

High DC Current Gain : hFE= 2000(Min.) @IC= 3.0A Low Saturation Voltage : VCE(sat)= 1.5V(Max.)@ IC= 3.0A Complement to Type 2SD635 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

High power switching applications.

Hammer d

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SB675 Silicon PNP Transistor Toshiba
2SB675 SILICON POWER TRANSISTOR SavantIC
2SB673 Silicon PNP Transistor Toshiba
2SB673 SILICON POWER TRANSISTOR SavantIC
2SB674 Silicon PNP Transistor Toshiba

Other Datasheets by Inchange Semiconductor

Part Number Description
2SB673 PNP Transistor
2SB674 PNP Transistor
2SB676 PNP Transistor
2SB677 PNP Transistor
2SB679 Silicon PNP Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon PNP Darlington Power Transistor 2SB675 DESCRIPTION ·High DC Current Gain : hFE= 2000(Min.) @IC= 3.0A ·Low Saturation Voltage : VCE(sat)= 1.5V(Max.)@ IC= 3.0A ·Complement to Type 2SD635 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power switching applications. ·Hammer drive, pulse motor drive applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.2 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.