2SB681 - PNP Transistor

Inchange Semiconductor

General Description

High Current Capability Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

For AF power amplifier use.

amplifier .

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2SB681 pnp transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2SB681
Manufacturer	Inchange Semiconductor
File Size	204.10 KB
Description	PNP Transistor
Datasheet	2SB681 Datasheet

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Other Datasheets by Inchange Semiconductor

Part Number	Description
2SB682	PNP Transistor
2SB683	PNP Transistor
2SB686	PNP Transistor
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isc Silicon PNP Power Transistor DESCRIPTION ·High Current Capability ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For AF power amplifier use. ·Recommended for use in output stage of 80 watts power amplifier . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -12 A 100 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SB681 isc website：www.iscsemi.