Datasheet Details
| Part number | 2SB681 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 204.10 KB |
| Description | PNP Transistor |
| Datasheet | 2SB681-INCHANGE.pdf |
|
|
Overview: isc Silicon PNP Power Transistor.
| Part number | 2SB681 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 204.10 KB |
| Description | PNP Transistor |
| Datasheet | 2SB681-INCHANGE.pdf |
|
|
|
·High Current Capability ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For AF power amplifier use.
·Recommended for use in output stage of 80 watts power amplifier .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -12 A 100 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SB681 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA ;IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA ;IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -6A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB681 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SB682 | PNP Transistor |
| 2SB683 | PNP Transistor |
| 2SB686 | PNP Transistor |
| 2SB689 | PNP Transistor |
| 2SB600 | PNP Transistor |
| 2SB601 | PNP Transistor |
| 2SB604 | PNP Transistor |
| 2SB608 | PNP Transistor |
| 2SB609 | PNP Transistor |
| 2SB611 | Silicon PNP Power Transistor |