Collector-Emitter Breakdown Voltage-
: V(BR)CEO = -100V(Min)
High Power Dissipation
Wide Area of Safe Operation
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for low frequency power amplifier and TV vertical
deflect
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isc Silicon PNP Power Transistor
2SB689
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = -100V(Min) ·High Power Dissipation ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low frequency power amplifier and TV vertical
deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-100
V
VCEO Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-4
V
IC
Collector Current-Continuous
-4
A
ICM
Collector Current-Peak
Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
-5
A
1.8 W
40
150
℃
Tstg
Storage Temperature Range
-45~150 ℃
isc website：www.iscsemi.
2SB689 Datasheet
