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2SB689 - PNP Transistor

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Part number 2SB689
Manufacturer INCHANGE
File Size 209.68 KB
Description PNP Transistor
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Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO = -100V(Min) High Power Dissipation Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier and TV vertical deflection output applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -

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