Datasheet Details
| Part number | 2SB689 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.68 KB |
| Description | PNP Transistor |
| Datasheet | 2SB689-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor 2SB689.
| Part number | 2SB689 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.68 KB |
| Description | PNP Transistor |
| Datasheet | 2SB689-INCHANGE.pdf |
|
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -100V(Min) ·High Power Dissipation ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier and TV vertical deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -4 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -5 A 1.8 W 40 150 ℃ Tstg Storage Temperature Range -45~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA;
RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB689 | SILICON POWER TRANSISTOR | SavantIC |
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