Datasheet Details
| Part number | 2SB691 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 215.75 KB |
| Description | PNP Transistor |
| Datasheet | 2SB691-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor 2SB691.
| Part number | 2SB691 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 215.75 KB |
| Description | PNP Transistor |
| Datasheet | 2SB691-INCHANGE.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD727 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier and power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -130 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -5 A 60 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB691 | SILICON POWER TRANSISTOR | SavantIC |
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