Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -140V(Min)
High Current Capability
Wide Area of Safe Operation
Complement to Type 2SD733
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for AF power amplifier app
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isc Silicon PNP Power Transistors
2SB697
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -140V(Min) ·High Current Capability ·Wide Area of Safe Operation ·Complement to Type 2SD733 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for AF power amplifier applications. ·Recommended for output stage of 80W power amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-160
V
VCEO
Collector-Emitter Voltage
-140
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-12
A
ICM
Emitter Current-Peak
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
-20
A
100
W
150
℃
Tstg
Storage Temperature
-40~150 ℃
isc website：www.
2SB697 Datasheet
