Datasheet Details
| Part number | 2SB697 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.88 KB |
| Description | PNP Transistor |
| Datasheet | 2SB697-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistors 2SB697.
| Part number | 2SB697 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.88 KB |
| Description | PNP Transistor |
| Datasheet | 2SB697-INCHANGE.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) ·High Current Capability ·Wide Area of Safe Operation ·Complement to Type 2SD733 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for AF power amplifier applications.
·Recommended for output stage of 80W power amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -12 A ICM Emitter Current-Peak PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -20 A 100 W 150 ℃ Tstg Storage Temperature -40~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -5mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB697 | SILICON POWER TRANSISTOR | SavantIC |
|
2SB697K | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SB690 | PNP Transistor |
| 2SB691 | PNP Transistor |
| 2SB692 | PNP Transistor |
| 2SB695 | PNP Transistor |
| 2SB696 | PNP Transistor |
| 2SB600 | PNP Transistor |
| 2SB601 | PNP Transistor |
| 2SB604 | PNP Transistor |
| 2SB608 | PNP Transistor |
| 2SB609 | PNP Transistor |