Inchange Semiconductor 2SB705A
Power Transistor
| Part No. | 2SB705A |
|---|---|
| Datasheet | 2SB705A Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Breakdown Voltage: V(BR)CEO= -140V(Min)●Complement to Type 2SD745
●High Power Dissipation
APPLICATIONS
●For audio frequency power amplifier applications●Suitable for output stages of 60~120 watts audio amplifier and voltage regulations.
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w s c s i . w VALUE UNIT -140 V -140 V -5 V -10 A -15 A 120 W n c . i m e IC Collector Current-Continuous ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature PC TJ 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website： INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SB705 MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A B -1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= -5A; IB= -0.5A B -2.0...