High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -200V(Min)
Wide Area of Safe Operation
Complement to Type 2SD760
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for power amplifier and TV vertical deflection
outp
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isc Silicon PNP Power Transistor
2SB720
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -200V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SD760 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power amplifier and TV vertical deflection
output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-200
V
VCEO Collector-Emitter Voltage
-200
V
VEBO
Emitter-Base Voltage
-5.0
V
IC
Collector Current-Continuous
-2
A
ICM
Collector Current-Peak
-3
A
PC
Total Power Dissipation@ TC=25℃
25
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
isc website：www.iscsemi.
2SB720 Datasheet
