2SB720 Description
·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min) ·Wide Area of Safe Operation ·plement to Type 2SD760 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier and TV vertical deflection output applications. 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER...