2SB722
2SB722 is PNP Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -160V(Min)
- High Power Dissipation-
: PC= 150W(Max)@TC=25℃
- High Current Capability
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-160
VCEO
Collector-Emitter Voltage
-160
VEBO
Emitter-Base Voltage
-5
Collector Current-Continuous
-15
Baser Current-Continuous
Collector Power Dissipation @TC=25℃
Junction Temperature
-4
℃
Tstg...
