Datasheet Details
| Part number | 2SB731 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 183.46 KB |
| Description | PNP Transistor |
| Datasheet | 2SB731-INCHANGE.pdf |
|
|
Overview: isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB731.
| Part number | 2SB731 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 183.46 KB |
| Description | PNP Transistor |
| Datasheet | 2SB731-INCHANGE.pdf |
|
|
|
·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= -50V(Min) ·Low Collector to Emitter Saturation Voltage : VCE(sat)= -0.6V(Max.)@IC= -1A ·DC Current Gain- : hFE= 135-600@IC= -0.1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power and low speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -1 A ICM Collector Current-Pulse -2 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range -0.5 A 10 W 150 ℃ -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB731 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -10mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -1A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB731 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SB703 | PNP Transistor |
| 2SB705 | PNP Transistor |
| 2SB705B | PNP Transistor |
| 2SB707 | PNP Transistor |
| 2SB708 | PNP Transistor |
| 2SB713 | PNP Transistor |
| 2SB719 | PNP Transistor |
| 2SB720 | PNP Transistor |
| 2SB722 | PNP Transistor |
| 2SB723 | PNP Transistor |