Datasheet Details
| Part number | 2SB743 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 179.66 KB |
| Description | PNP Transistor |
| Datasheet | 2SB743-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB743.
| Part number | 2SB743 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 179.66 KB |
| Description | PNP Transistor |
| Datasheet | 2SB743-INCHANGE.pdf |
|
|
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·Collector-Emitter BreakdownVoltage- : V(BR)CEO= -30V(Min.) ·Low Collector to Emitter Saturation Voltage : VCE(sat)= -2.0V(Max.)@IC= -1.5A ·Excellent hFE linearity ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3 A ICM Collector Current-Pulse -5 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range -0.6 A 10 W 150 ℃ -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB743 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -10mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -1.5A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB743 | SILICON POWER TRANSISTOR | SavantIC |
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