Datasheet Details
| Part number | 2SB757 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.09 KB |
| Description | PNP Transistor |
| Datasheet |
 2SB757 Datasheet
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| Part number | 2SB757 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.09 KB |
| Description | PNP Transistor |
| Datasheet |
2SB757 Datasheet
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min) ·Good Linearity of hFE ·High Current Capability ·Wide Area of Safe Operation ·Complement to Type 2SD847 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio amplifier applications ·Series regulators ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage -40 V -5 V IC Collector Current-Continuous IB Base Current- Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -15 A -5 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.56 ℃/W 2SB757 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -0.1mA;
IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -0.1mA;
isc Silicon PNP Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB757 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
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