Inchange Semiconductor 2SB757
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SB757 |
|---|---|
| Datasheet | 2SB757 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | PNP Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min)●Good Linearity of hFE
●High Current Capability
●Wide Area of Safe Operation
●Complement to Type 2SD847
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Audio amplifier applications●Series regulators
●General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage -40 V -5 V IC Collector Current-Continuous IB Base Current- Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -15 A -5 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.56 ℃/W 2SB757 isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO...