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2SB757 - PNP Transistor

Datasheet Summary

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min) Good Linearity of hFE High Current Capability Wide Area of Safe Operation Complement to Type 2SD847 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio amp

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Datasheet Details

Part number 2SB757
Manufacturer INCHANGE
File Size 212.09 KB
Description PNP Transistor
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isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min) ·Good Linearity of hFE ·High Current Capability ·Wide Area of Safe Operation ·Complement to Type 2SD847 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio amplifier applications ·Series regulators ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage -40 V -5 V IC Collector Current-Continuous IB Base Current- Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -15 A -5 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTI
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