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2SB763 - PNP Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) Good Linearity of hFE High Collector Power Dissipation Complement to Type 2SD858 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for AF power amplifier a

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isc Silicon PNP Power Transistor 2SB763 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Good Linearity of hFE ·High Collector Power Dissipation ·Complement to Type 2SD858 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for AF power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -10 A 60 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.