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2SB775 - PNP Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -85V(Min) Good Linearity of hFE High Current Capability Wide Area of Safe Operation Complement to Type 2SD895 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed

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isc Silicon PNP Power Transistor 2SB775 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -85V(Min) ·Good Linearity of hFE ·High Current Capability ·Wide Area of Safe Operation ·Complement to Type 2SD895 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for 35W audio frequency output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -85 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -6 A ICP Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -10 A 60 W 150 ℃ Tstg Storage Temperature Range -40~150 ℃ isc website：www.iscsemi.