2SB775 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -85V(Min) ·Good Linearity of hFE ·High Current Capability ·Wide Area of Safe Operation ·plement to Type 2SD895 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for 35W audio frequency output applications. 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB775 TC=25℃ unless otherwise...