Datasheet Details
| Part number | 2SB791 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.36 KB |
| Description | PNP Transistor |
| Datasheet | 2SB791-INCHANGE.pdf |
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Overview: isc Silicon PNP Darlington Power Transistor 2SB791.
| Part number | 2SB791 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.36 KB |
| Description | PNP Transistor |
| Datasheet | 2SB791-INCHANGE.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= -4A ·Low Saturation Voltage ·Complement to Type 2SD970 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium speed and power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -8 A ICP Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -12 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA;
RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= -50mA;
IC= 0 VCE(sat)-1★ Collector-Emitter Saturation Voltage IC= -4A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB791 | Silicon PNP Transistor | Hitachi Semiconductor |
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2SB791K | Silicon PNP Transistor | Hitachi Semiconductor |
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