Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min)
High DC Current Gain
: hFE= 1000(Min) @IC= -4A
Low Saturation Voltage
Complement to Type 2SD970
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for medi
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isc Silicon PNP Darlington Power Transistor
2SB791
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min) ·High DC Current Gain
: hFE= 1000(Min) @IC= -4A ·Low Saturation Voltage ·Complement to Type 2SD970 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for medium speed and power switching
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-120
V
VCEO
Collector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-8
A
ICP
Collector Current-Peak
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-12
A
40
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc website：www.iscsemi.
2SB791 Datasheet
