Datasheet Details
| Part number | 2SB795 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 185.59 KB |
| Description | PNP Transistor |
| Datasheet | 2SB795-INCHANGE.pdf |
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Overview: isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor 2SB795.
| Part number | 2SB795 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 185.59 KB |
| Description | PNP Transistor |
| Datasheet | 2SB795-INCHANGE.pdf |
|
|
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·High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -1A) · Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max.) @IC= -1A ·Built-in a dumper diode at C-E ·Complement to Type 2SD986 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose amplifier ,hammer driver and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -8 V IC Collector Current-Continuous -1.5 A ICM Collector Current-Peak Collector Power Dissipation Ta=25℃ PC Collector Power Dissipation TC=25℃ Ti Junction Temperature Tstg Storage Temperature Range -3.0 A 1.0 W 10 150 ℃ -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor 2SB795 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBO L PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -1A;
IB= -1mA VBE(sat) Base-Emitter Saturation Voltage IC= -1A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB795 | (2SB794 / 2SB795) SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SB791 | PNP Transistor |
| 2SB794 | PNP Transistor |
| 2SB796 | PNP Transistor |
| 2SB703 | PNP Transistor |
| 2SB705 | PNP Transistor |
| 2SB705B | PNP Transistor |
| 2SB707 | PNP Transistor |
| 2SB708 | PNP Transistor |
| 2SB713 | PNP Transistor |
| 2SB719 | PNP Transistor |