Datasheet Details
| Part number | 2SB812 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 216.03 KB |
| Description | PNP Transistor |
| Datasheet | 2SB812-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor 2SB812.
| Part number | 2SB812 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 216.03 KB |
| Description | PNP Transistor |
| Datasheet | 2SB812-INCHANGE.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·High Power Dissipation ·Complement to Type 2SD1032 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for AF power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -8 A 60 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -4A;
IB= -0.4A VBE(on) Base -Emitter On Voltage IC= -3A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SB812 | SILICON POWER TRANSISTOR | SavantIC |
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