2SB812
2SB812 is PNP Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min)
- High Power Dissipation
- plement to Type 2SD1032
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for AF power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60
VCEO
Collector-Emitter Voltage
-60
VEBO
Emitter-Base Voltage
-5
Collector Current-Continuous
-4
Collector Current-Peak
Collector Power Dissipation @ TC=25℃
Junction Temperature
-8
℃
Tstg
Storage Temperature...
