Datasheet Details
| Part number | 2SB826 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.48 KB |
| Description | PNP Transistor |
| Datasheet | 2SB826-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor 2SB826.
| Part number | 2SB826 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.48 KB |
| Description | PNP Transistor |
| Datasheet | 2SB826-INCHANGE.pdf |
|
|
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·High Collector Current:: IC= -12A ·Low Collector Saturation Voltage : VCE(sat)= -0.5V(Max)@IC= -6A ·Wide Area of Safe Operation ·Complement to Type 2SD1062 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for relay drivers, high-speed inverters, converters, and other gereral high-current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -12 A ICM Collector Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -15 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA ;
RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SB826 | PNP/NPN Epitaxial Planar Silicon Transistors | Sanyo Semicon Device |
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2SB826 | PNP / NPN Epitaxial Planar Silicon Transistors | ON Semiconductor |
| Part Number | Description |
|---|---|
| 2SB823 | PNP Transistor |
| 2SB824 | PNP Transistor |
| 2SB825 | PNP Transistor |
| 2SB827 | PNP Transistor |
| 2SB828 | PNP Transistor |
| 2SB829 | PNP Transistor |
| 2SB812 | PNP Transistor |
| 2SB813 | PNP Transistor |
| 2SB816 | PNP Transistor |
| 2SB817C | PNP Transistor |