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2SB827 - PNP Transistor

General Description

High Collector Current:: IC= -7A Low Collector Saturation Voltage : VCE(sat)= -0.4V(Max)@IC= -4A Wide Area of Safe Operation Complement to Type 2SD1063 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Universal high curren

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isc Silicon PNP Power Transistor DESCRIPTION ·High Collector Current:: IC= -7A ·Low Collector Saturation Voltage : VCE(sat)= -0.4V(Max)@IC= -4A ·Wide Area of Safe Operation ·Complement to Type 2SD1063 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Universal high current switching as solenoid driving, high speed inverter and converter. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -7 A ICM Collector Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -14 A 60 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB827 isc website：www.