Datasheet Details
| Part number | 2SB863 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 215.88 KB |
| Description | PNP Transistor |
| Datasheet | 2SB863-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2SB863 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 215.88 KB |
| Description | PNP Transistor |
| Datasheet | 2SB863-INCHANGE.pdf |
|
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) ·Good Linearity of hFE ·Complement to Type 2SD1148 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 70W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -140 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -1 A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB863 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB863 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA;
IB= 0 -140 V VCE(sat) Collector-Emitter Saturation Voltage IC= -5.0A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SB863 | Silicon PNP Transistor | Toshiba |
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2SB863 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
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| 2SB812 | PNP Transistor |
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| 2SB816 | PNP Transistor |
| 2SB817C | PNP Transistor |
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