2SB867
2SB867 is PNP Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min)
- Good Linearity of h FE
- Low Collector Saturation Voltage
: VCE(sat)= -0.5V(Max)@IC= -2A
- plement to Type 2SD959
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-130
VCEO
Collector-Emitter Voltage
-80
VEBO
Emitter-Base Voltage
-7
Collector Current-Continuous
-3
Collector Current-Peak
Collector Power Dissipation @ TC=25℃
Junction Temperature
-6
℃...
