Inchange Semiconductor 2SB941A
Silicon PNP Power Transistor
2SB941A Specifications
- Max Collector Current : 3A
- Terminals : 3
- Collector Emitter Voltage : 60V
- Max Power Dissipation : 2W
- Max Operating Temp : 150°C
Source:
Octopart
DESCRIPTION
¡¤With TO-220Fa package ¡¤Low collector saturation voltage ¡¤Complementary to type 2SD1266/1266AAPPLICATIONS
¡¤For low-frequency power amplification PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbolDESCRIPTION
Absolute maximum ratings(Ta=25¡æ ) SYMBOL PARAMETER 2SB941 VCBO Collector-base voltage 2SB941A 2SB941 VCEO Collector-emitter voltage 2SB941A VEBO IC ICM Emitter-base voltage Collector current Collector current-peak Ta=25¡æ PC Collector power dissipation TC=25¡æ Tj Tstg Junction temperature Storage temperature 35 150 -55~150 ¡æ ¡æ Open collector Open base -80 -5 -3 -5 2 W V A A Open emitter -80 -60 V CONDITIONS VALUE -60 V UNIT Free Datasheet Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25¡æ unless otherwise specified PARAMETER 2SB941 IC=-30mA ,IB=0 2SB941A IC=-3A, IB=-0.375A IC=-3A ; VCE=-4V VEB=-5V; IC=0 2SB941 2SB941A 2SB941 2SB941A VCE=-30V; IB=0 CONDITIONS 2SB941 2SB941A SYMBOL MIN -60 TYP.