Inchange Semiconductor 2SB950A
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SB950A |
|---|---|
| Datasheet | 2SB950A Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon PNP Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High DC Current Gain- : hFE= 2000(Min.)@IC= -3A●High Speed Switching
●Complement to Type 2SD1276A
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for power amplifier and switching applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -8 A 2 W 40 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB950A isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor 2SB950AELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA ; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A; IB= -12mA VCE(sat)-2 Col...