Datasheet Details
| Part number | 2SB980 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 216.02 KB |
| Description | PNP Transistor |
| Datasheet | 2SB980-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor 2SB980.
| Part number | 2SB980 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 216.02 KB |
| Description | PNP Transistor |
| Datasheet | 2SB980-INCHANGE.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplifications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -6 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -10 A 70 W 3 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -4A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SB980 | SILICON POWER TRANSISTOR | SavantIC |
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|---|---|
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