Datasheet Details
| Part number | 2SB983 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.73 KB |
| Description | PNP Transistor |
| Datasheet | 2SB983-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2SB983 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.73 KB |
| Description | PNP Transistor |
| Datasheet | 2SB983-INCHANGE.pdf |
|
|
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·High Switching Time ·Low Collector Saturation Voltage : VCE(sat)= -0.4V(Max)@IC= -4A ·Wide Area of Safe Operation ·plement to Type 2SD1345 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Inverters, converters ·Controllers for DC motor, pulse motor ·Switching power supplies ·General power applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM IB IBM PC TJ Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-Peak Total Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range -60 V -50 V -6 V -7 A -12 A -1.5 A -4 A 40 W 150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 3.1 UNIT ℃/W 2SB983 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -4A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB983 | Silicon Power Transistor | SHINDENGEN |
| Part Number | Description |
|---|---|
| 2SB980 | PNP Transistor |
| 2SB981 | PNP Transistor |
| 2SB982 | PNP Transistor |
| 2SB986 | PNP Transistor |
| 2SB988 | PNP Transistor |
| 2SB989 | Silicon PNP Power Transistor |
| 2SB901 | PNP Transistor |
| 2SB919 | PNP Transistor |
| 2SB963 | PNP Transistor |
| 2SB963-Z | PNP Transistor |