The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
isc Silicon PNP Power Transistor
DESCRIPTION ·High Switching Time ·Low Collector Saturation Voltage
: VCE(sat)= -0.4V(Max)@IC= -4A ·Wide Area of Safe Operation ·Complement to Type 2SD1345 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Inverters, converters ·Controllers for DC motor, pulse motor ·Switching power supplies ·General power applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO VCEO VEBO
IC ICM IB IBM PC TJ Tstg
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-Peak Total Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range
-60
V
-50
V
-6
V
-7
A
-12
A
-1.