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2SB983 Datasheet PDF

Inchange Semiconductor 2SB983

The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.
Part No. 2SB983
Datasheet 2SB983 Download
Manufacturer
Inchange Semiconductor
Description PNP Transistor
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2SB983 datasheet page 1 preview

DESCRIPTION

●High Switching Time
●Low Collector Saturation Voltage : VCE(sat)= -0.4V(Max)@IC= -4A
●Wide Area of Safe Operation
●Complement to Type 2SD1345
●Minimum Lot-to-Lot variations for robust device performance and reliable operation

APPLICATIONS

●Inverters, converters
●Controllers for DC motor, pulse motor
●Switching power supplies
●General power applications

ABSOLUTE MAXIMUM RATINGS

(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM IB IBM PC TJ Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-Peak Total Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range -60 V -50 V -6 V -7 A -12 A -1.5 A -4 A 40 W 150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 3.1 UNIT ℃/W 2SB983 isc website: 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor

ELECTRICAL CHARACTERISTICS

TC=2...
2SB983 page 2 preview