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2SB986 - PNP Transistor

General Description

High Collector Current-IC= -4.0A Low Saturation Voltage - : VCE(sat)= -0.5V(Max)@ IC= -2A, IB= -0.1A Good Linearity of hFE Complement to Type 2SD1348 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power suppl

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isc Silicon PNP Power Transistor DESCRIPTION ·High Collector Current-IC= -4.0A ·Low Saturation Voltage - : VCE(sat)= -0.5V(Max)@ IC= -2A, IB= -0.1A ·Good Linearity of hFE ·Complement to Type 2SD1348 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power supplies, relay drivers, lamp drivers, electrical equipment applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -4 A ICP Collector Current-Pulse Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -6 A 1.