Datasheet Details
| Part number | 2SB986 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.25 KB |
| Description | PNP Transistor |
| Datasheet | 2SB986-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2SB986 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.25 KB |
| Description | PNP Transistor |
| Datasheet | 2SB986-INCHANGE.pdf |
|
|
|
·High Collector Current-IC= -4.0A ·Low Saturation Voltage - : VCE(sat)= -0.5V(Max)@ IC= -2A, IB= -0.1A ·Good Linearity of hFE ·plement to Type 2SD1348 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power supplies, relay drivers, lamp drivers, electrical equipment applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -4 A ICP Collector Current-Pulse Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -6 A 1.2 W 10 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB986 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= -10μA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB986 | PNP Transistor | Sanyo Semicon Device |
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|---|---|
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