Datasheet Details
| Part number | 2SB988 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.35 KB |
| Description | PNP Transistor |
| Datasheet | 2SB988-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2SB988 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.35 KB |
| Description | PNP Transistor |
| Datasheet | 2SB988-INCHANGE.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Collector Power Dissipation- : PC= 30W@ TC= 25℃ ·Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max)@ (IC= -2A, IB= -0.2A) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -3 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -0.5 A 2 W 30 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SB988 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB988 | SILICON POWER TRANSISTOR | SavantIC |
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