Datasheet Details
| Part number | 2SC1004 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 174.00 KB |
| Description | NPN Transistor |
| Datasheet | 2SC1004-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1004.
| Part number | 2SC1004 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 174.00 KB |
| Description | NPN Transistor |
| Datasheet | 2SC1004-INCHANGE.pdf |
|
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·With TO-3 Package ·High breakdown voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·for use in horizontal deflection output stages for color TV receives ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO VEBO IC IB PC TJ Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation Junction Temperature Tstg Storage Temperature Range 1100 V 700 V 5 V 0.5 A 0.1 A 50 W 150 ℃ -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1004 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 150mA;
IB= 30mA VBE(sat) Base-Emitter Saturation Voltage IC= 150mA;
IB= 30mA V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC1004 | SILICON POWER TRANSISTOR | SavantIC |
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