Datasheet Details
| Part number | 2SC1027 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 204.46 KB |
| Description | NPN Transistor |
| Datasheet | 2SC1027-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SC1027 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 204.46 KB |
| Description | NPN Transistor |
| Datasheet | 2SC1027-INCHANGE.pdf |
|
|
|
·With TO-3 package ·High power dissipation ·Low collector saturation voltag ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·DC-DC convertor ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 6 A PC Collector Power Dissipation@TC=25℃ 50 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.52 ℃/W 2SC1027 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=30mA ;
IB=0 V(BR)CBO Collector-base breakdown voltage IC =1mA ;
IE=0 V(BR)EBO Emitter-base breakdown voltage IE =1mA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC1027 | SILICON POWER TRANSISTOR | SavantIC |
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