Datasheet4U Logo Datasheet4U.com

2SC1027 - NPN Transistor

General Description

With TO-3 package High power dissipation Low collector saturation voltag Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators DC-DC convertor General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SC1027 SILICON POWER TRANSISTOR SavantIC
2SC1000 Silicon NPN Transistor Toshiba
2SC1000 Silicon NPN Transistor ETC
2SC1001 SILICON NPN TRANSISTOR Toshiba
2SC1002 Silicon NPN Power Transistors SavantIC

Other Datasheets by Inchange Semiconductor

Part Number Description
2SC1024 NPN Transistor
2SC1004 NPN Transistor
2SC1008 NPN Transistor
2SC1034 NPN Transistor
2SC1046 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor DESCRIPTION ·With TO-3 package ·High power dissipation ·Low collector saturation voltag ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·DC-DC convertor ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 6 A PC Collector Power Dissipation@TC=25℃ 50 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.52 ℃/W 2SC1027 isc website：www.iscsemi.