Datasheet Details
| Part number | 2SC1034 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 177.82 KB |
| Description | NPN Transistor |
| Datasheet | 2SC1034-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1034.
| Part number | 2SC1034 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 177.82 KB |
| Description | NPN Transistor |
| Datasheet | 2SC1034-INCHANGE.pdf |
|
|
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·DC Current Gain -hFE = 4(Min)@ IC= 0.75A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 700V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 700 V VEBO IC ICM PC TJ Tstg Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range 5 V 1.0 A 5.0 A 25 W 150 ℃ -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 5.0 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1034 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 0.75A;
IB= 0.075A VBE(sat) Base-Emitter Saturation Voltage IC= 0.75A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC1034 | SILICON POWER TRANSISTOR | SavantIC |
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