Datasheet Details
| Part number | 2SC1046 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 173.13 KB |
| Description | NPN Transistor |
| Datasheet | 2SC1046-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1046.
| Part number | 2SC1046 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 173.13 KB |
| Description | NPN Transistor |
| Datasheet | 2SC1046-INCHANGE.pdf |
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·With TO-3 Package ·High breakdown voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·for use in horizontal deflection output stages for color TV receives ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO VEBO IC IB PC TJ Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation Junction Temperature Tstg Storage Temperature Range 1000 V 400 V 6 V 3.0 A 0.1 A 25 W 125 ℃ -40~125 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1046 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 2.0A;
IB= 400mA VBE(sat) Base-Emitter Saturation Voltage IC= 150mA;
IB= 30mA V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC1046 | SILICON POWER TRANSISTOR | SavantIC |
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