2SC1050
DESCRIPTION
- With TO-3 Package
- High breakdown voltage
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Silicon NPN high frequency,high power transistors in a plastic envelope,primarily for use in audio and general purpose
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO VEBO
IC IB PC TJ
Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation
Junction Temperature
Tstg
Storage Temperature Range
℃
-55~150
℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor
INCHANGE Semiconductor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 100m A
V(BR)CEO Collector-Emitter Breakdown Voltage...
