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2SC1060 - NPN Power Transistor

General Description

With TO-220 package Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) Low Collector Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 2A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators DC-DC conve

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isc Silicon NPN Power Transistor 2SC1060 DESCRIPTION ·With TO-220 package ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= 1.