Inchange Semiconductor 2SC1061
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC1061 |
|---|---|
| Datasheet | 2SC1061 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistors |
| Buy | Stock & Price |
DESCRIPTION
●Low Collector Saturation Voltage- :VCE(sat)= 1.0(V)(Max)@ IC= 2A●DC Current Gain- : hFE= 35-320 @ IC= 0.5A
●Complement to Type 2SA671
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for use in low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 4 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 8 A IB Base Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 0.5 A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 5.0 UNIT ℃/W 2SC1061 isc website： 1 isc&iscsemi is registered trademark isc Silicon NPN Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdo...