Datasheet Details
| Part number | 2SC1163 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 178.78 KB |
| Description | NPN Transistor |
| Datasheet | 2SC1163-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1163.
| Part number | 2SC1163 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 178.78 KB |
| Description | NPN Transistor |
| Datasheet | 2SC1163-INCHANGE.pdf |
|
|
|
·High Collector Current IC= 0.1A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 4 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.1 A 20.8 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademar isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1163 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC1163 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SC1161 | NPN Transistor |
| 2SC1162 | NPN Transistor |
| 2SC1102 | NPN Transistor |
| 2SC1106 | NPN Transistor |
| 2SC1108 | NPN Transistor |
| 2SC1111 | NPN Transistor |
| 2SC1112 | NPN Transistor |
| 2SC1113 | NPN Transistor |
| 2SC1114 | NPN Transistor |
| 2SC1115 | NPN Transistor |