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2SC1212 - NPN Transistor

General Description

High Collector Current IC= 1A Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) Good Linearity of hFE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for low frequency power amplifier applications.

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isc Silicon NPN Power Transistor DESCRIPTION ·High Collector Current IC= 1A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 4 V IC Collector Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 1 A 8 W 0.75 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC1212 isc website：www.iscsemi.