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2SC1235 Datasheet PDF

Inchange Semiconductor 2SC1235

The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.
Part No. 2SC1235
Datasheet 2SC1235 Download
Manufacturer
Inchange Semiconductor
Description NPN Transistor
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2SC1235 datasheet page 1 preview

DESCRIPTION

●With TO-66 Package
●Low collector saturation voltage
●Minimum Lot-to-Lot variations for robust device performance and reliable operation.

APPLICATIONS

●Designed for use in lined-operated color TV chroma output circuits and sound output circuits

ABSOLUTE MAXIMUM RATINGS

(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO IC PC TJ Tstg Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range 7 V 0.1 A 6.5 W 150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 19.23 ℃/W isc website: 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1235

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 50mA; IB= 5mA ICBO Collector Cutoff Current VCB= 300V;IB= 0 IEBO...
2SC1235 page 2 preview