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2SC1343 Datasheet PDF

Inchange Semiconductor 2SC1343

The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.
Part No. 2SC1343
Datasheet 2SC1343 Download
Manufacturer
Inchange Semiconductor
Description NPN Transistor
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2SC1343 datasheet page 1 preview

DESCRIPTION

●With TO-3 Package
●High voltage
●Wide area of safe operation
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation

APPLICATIONS

●For large screen color deflection circuits

ABSOLUTE MAXIMUM RATINGS

(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO VEBO IC PC TJ Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation Junction Temperature Tstg Storage Temperature Range 150 V 110 V 5 V 10 A 100 W -65~200 ℃ -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.75 ℃/W isc website: 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1343

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC=5A; IB= 0.5 A VBE(sat) Base-Emitter Saturation Voltage IC=5A; IB= 0.5A V(BR)CEO Collector-Em...
2SC1343 page 2 preview