2SC1403
DESCRIPTION
- Wide area of safe operation
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- For audio frequency power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Collector Power Dissipation @ TC=25℃
Junction Temperature
℃
Tstg
Storage Temperature Range
-50~150
℃
2SC1403 isc website：.iscsemi.cn
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector- Emitter Breakdown Voltage IC= 50m A ; IE= 0
V(BR)EBO Emitter-Base Breakdown...
