Inchange Semiconductor 2SC1403
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC1403 |
|---|---|
| Datasheet | 2SC1403 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Wide area of safe operation●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●For audio frequency power amplifier applicationsABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 8 A 70 W 150 ℃ Tstg Storage Temperature Range -50~150 ℃ 2SC1403 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector- Emitter Breakdown Voltage IC= 50mA ; IE= 0 V(BR)EBO Emitter-Base Breakdown Vltage IE= 1mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage IC= 5A ; IB= 0.5A ICBO Collector cut-off current VCB=160V; IE=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE DC current gain IC=3A ; VCE=4V fT Transition frequency IC=0.5A ; VCE=10V 2SC1403 MIN TYP.