Datasheet Details
| Part number | 2SC1431 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 173.87 KB |
| Description | NPN Transistor |
| Datasheet | 2SC1431-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1431.
| Part number | 2SC1431 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 173.87 KB |
| Description | NPN Transistor |
| Datasheet | 2SC1431-INCHANGE.pdf |
|
|
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·With TO-3 Package ·High voltage ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO VEBO IC PC TJ Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation Junction Temperature Tstg Storage Temperature Range 110 V 110 V 5 V 2 A 23 W -65~200 ℃ -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 7.6 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1431 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC=1.0A;
IB= 0.1A VBE(sat) Base-Emitter Saturation Voltage IC=1.0A;
IB= 0.1A V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC1431 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SC1402 | NPN Transistor |
| 2SC1403 | NPN Transistor |
| 2SC1413A | NPN Transistor |
| 2SC1418 | NPN Transistor |
| 2SC1419 | NPN Transistor |
| 2SC1440 | NPN Transistor |
| 2SC1441 | NPN Transistor |
| 2SC1444 | NPN Transistor |
| 2SC1445 | NPN Transistor |
| 2SC1446 | NPN Transistor |