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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC1445
DESCRIPTION ·With TO-66 Package ·Low collector saturation voltage ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation.
APPLICATIONS ·Designed for switching and wide-band amplifier
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
80
V
VEBO IC PC TJ Tstg
Emitter-Base Voltage
Collector Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature
Storage Temperature Range
6
V
6
A
40
W
-65~150 ℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT 3.125 ℃/W
isc website:www.iscsemi.