Datasheet Summary
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 300V(Min)
- Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 2.0V(Max) @IC= 50mA
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for use in line-operated color TV chroma output Circuits and sound output...
