Datasheet Details
| Part number | 2SC1507 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 183.11 KB |
| Description | NPN Transistor |
| Datasheet | 2SC1507-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1507.
| Part number | 2SC1507 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 183.11 KB |
| Description | NPN Transistor |
| Datasheet | 2SC1507-INCHANGE.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max) @IC= 50mA ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in line-operated color TV chroma output Circuits and sound output circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 200 mA 15 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1507 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 50mA;
IB=5mA 2.0 V ICBO Collector Cutoff Current VCB= 200V ;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC1507 | NPN Silicon Transistor | NEC |
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