Datasheet Details
| Part number | 2SC1516 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 183.22 KB |
| Description | NPN Transistor |
| Datasheet | 2SC1516-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1516.
| Part number | 2SC1516 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 183.22 KB |
| Description | NPN Transistor |
| Datasheet | 2SC1516-INCHANGE.pdf |
|
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·High Collector Current IC= 1.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 35V(Min) ·Good Linearity of hFE ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 35 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 1.5 A 1 W 10 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1516 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ;
IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC1516 | SILICON POWER TRANSISTOR | SavantIC |
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