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2SC1567 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage : V(BR)CEO= 100V(Min) Good Linearity of hFE Complement to Type 2SA794 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for low-frequency high power driver.

Optimum for the driver

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= 100V(Min) ·Good Linearity of hFE ·Complement to Type 2SA794 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low-frequency high power driver. ·Optimum for the driver stage of low-frequency and 40W to 100W output amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 0.5 A ICP Collector Current-Peak PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 1 A 1.2 W 150 ℃ Tstg Storage Temperature Range -40~150 ℃ 2SC1567 isc website：www.iscsemi.