Inchange Semiconductor 2SC1567
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC1567 |
|---|---|
| Datasheet | 2SC1567 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Breakdown Voltage : V(BR)CEO= 100V(Min)●Good Linearity of hFE
●Complement to Type 2SA794
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for low-frequency high power driver.●Optimum for the driver stage of low-frequency and 40W to 100W output amplifier.
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 0.5 A ICP Collector Current-Peak PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 1 A 1.2 W 150 ℃ Tstg Storage Temperature Range -40~150 ℃ 2SC1567 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC1567ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 0.1mA ; IB= 0 V(BR)EBO Emitter-Base Breakdown Vltage IE= 1μA; IC=...