Datasheet Summary
isc Silicon NPN Power Transistor
DESCRIPTION
- Collector-Emitter Breakdown Voltage
: V(BR)CEO= 100V(Min)
- Good Linearity of hFE
- plement to Type 2SA794
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for low-frequency high power driver.
- Optimum for the driver stage of low-frequency and 40W to 100W output...
