High Power Dissipation-
: PC= 150W(Max.)@TC=25℃
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min.)
Complement to Type 2SA907
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for amplifier and general purpose a
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isc Silicon NPN PowerTransistor
DESCRIPTION ·High Power Dissipation-
: PC= 150W(Max.)@TC=25℃ ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min.) ·Complement to Type 2SA907 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for amplifier and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
150
V
VCEO Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
15
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
5
A
150
W
150
℃
Tstg
Storage Temperature
-65~150 ℃
2SC1584
isc website： www.iscsemi.
2SC1584 Datasheet
