2SC1609
DESCRIPTION
- With TO-3 Package
- High voltage
- Wide area of safe operation
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO VEBO
IC PC TJ
Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation
Junction Temperature
Tstg
Storage Temperature Range
℃
-55~175
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case 1.25 ℃/W isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor
INCHANGE Semiconductor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat)-1 Collector-Emitter Saturation Voltage IC=10A; IB= 1.0A
VCE(sat)-2 Collector-Emitter Saturation...
