Datasheet Details
| Part number | 2SC1609 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 173.79 KB |
| Description | NPN Transistor |
| Datasheet | 2SC1609-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1609.
| Part number | 2SC1609 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 173.79 KB |
| Description | NPN Transistor |
| Datasheet | 2SC1609-INCHANGE.pdf |
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·With TO-3 Package ·High voltage ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO VEBO IC PC TJ Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation Junction Temperature Tstg Storage Temperature Range 140 V 120 V 6 V 25 A 120 W 175 ℃ -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.25 ℃/W isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1609 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)-1 Collector-Emitter Saturation Voltage IC=10A;
IB= 1.0A VCE(sat)-2 Collector-Emitter Saturation Voltage IC=20A;
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SC1609 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SC1610 | NPN Transistor |
| 2SC1617 | NPN Transistor |
| 2SC1618 | NPN Transistor |
| 2SC1619 | NPN Transistor |
| 2SC1623 | NPN Transistor |
| 2SC1624 | NPN Transistor |
| 2SC1625 | NPN Transistor |
| 2SC1626 | NPN Transistor |
| 2SC1667 | NPN Transistor |
| 2SC1672 | NPN Transistor |