Datasheet Details
| Part number | 2SC1683 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 185.61 KB |
| Description | NPN Transistor |
| Datasheet | 2SC1683-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1683.
| Part number | 2SC1683 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 185.61 KB |
| Description | NPN Transistor |
| Datasheet | 2SC1683-INCHANGE.pdf |
|
|
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·Silicon NPN triple diffused mesa ·High breakdown voltage ·Large collector dissipation ·Complementary pair with 2SA843 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·AF power amplifier ·Color TV vertical deflection output ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.5 A 5 W 20 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1683 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A;
IB= 50mA VBE(ON) Base-Emitter ON Voltage IC= 0.4A ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC1683 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SC1609 | NPN Transistor |
| 2SC1610 | NPN Transistor |
| 2SC1617 | NPN Transistor |
| 2SC1618 | NPN Transistor |
| 2SC1619 | NPN Transistor |
| 2SC1623 | NPN Transistor |
| 2SC1624 | NPN Transistor |
| 2SC1625 | NPN Transistor |
| 2SC1626 | NPN Transistor |
| 2SC1667 | NPN Transistor |