2SC1683
DESCRIPTION
- Silicon NPN triple diffused mesa
- High breakdown voltage
- Large collector dissipation
- plementary pair with 2SA843
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- AF power amplifier
- Color TV vertical deflection output
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Collector Power Dissipation
@ Ta=25℃
PC Collector Power Dissipation @ TC=25℃
Junction Temperature
5 W
℃
Tstg
Storage Temperature Range
-55~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor
INCHANGE Semiconductor
ELECTRICAL CHARACTERISTICS...
